دیتاشیت MCH6344-TL-H
مشخصات دیتاشیت
| نام دیتاشیت |
MCH6344
|
| حجم فایل |
684.422
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi MCH6344-TL-H
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
800mW
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Total Gate Charge (Qg@Vgs):
3.9nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
172pF@10V
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Continuous Drain Current (Id):
2A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
36pF@10V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
115mΩ@10V,1A
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Package:
SC-88FL
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Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tape & Reel (TR)
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Part Status:
Not For New Designs
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
150mOhm @ 1A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
3.9nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
172pF @ 10V
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FET Feature:
-
-
Power Dissipation (Max):
800mW (Ta)
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Mounting Type:
Surface Mount
-
Supplier Device Package:
6-MCPH
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Package / Case:
6-SMD, Flat Leads
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Base Part Number:
MCH63
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detail:
P-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount 6-MCPH
